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| MCR703A Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. * Small Size * Passivated Die Surface for Reliability and Uniformity * Low Level Triggering and Holding Characteristics * Recommend Electrical Replacement for C106 * Surface Mount Package -- Case 369A * Device Marking: Logo, Device Type, e.g., CR703A, Date Code MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (TC = -40 to +110C, Sine Wave, 50 to 60 Hz, Gate Open) MCR703A MCR704A MCR706A MCR708A Peak Non-Repetitive Off-State Voltage (Sine Wave, 50 to 60 Hz, Gate Open, TC = -40 to +110C) MCR703A MCR704A MCR706A MCR708A On-State RMS Current (180 Conduction Angles, TC = 90C) Average On-State Current (180 Conduction Angles) TC = -40 to +90C TC = +100C Non-Repetitive Surge Current (1/2 Sine Wave, 60 Hz, TJ = 110C) (1/2 Sine Wave, 1.5 ms, TJ = 110C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (Pulse Width 10 ms, TC = 90C) Forward Average Gate Power (t = 8.3 ms, TC = 90C) Forward Peak Gate Current (Pulse Width 10 ms, TC = 90C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM Value Unit Volts 100 200 400 600 Volts 150 250 450 650 IT(RMS) IT(AV) 2.6 1.6 ITSM Amps 25 35 2.6 0.5 0.1 0.2 - 40 to +110 - 40 to +150 A2s Watt Watt MCR704AT4 Amp C C MCR708AT4 DPAK 369A MCR706AT4 DPAK 369A DPAK 369A 16mm Tape and Reel (2.5K/Reel) 16mm Tape and Reel (2.5K/Reel) 16mm Tape and Reel (2.5K/Reel) 4.0 Amps Amps 12 3 4 Preferred Device http://onsemi.com SCRs 4.0 AMPERES RMS 100 thru 600 VOLTS G A K VRSM D-PAK CASE 369A STYLE 5 PIN ASSIGNMENT 1 2 3 4 Gate Anode Cathode Anode ORDERING INFORMATION Device MCR703AT4 Package DPAK 369A Shipping 16mm Tape and Reel (2.5K/Reel) I2t PGM PG(AV) IGM TJ Tstg (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 1999 1 March, 2000 - Rev. 3 Publication Order Number: MCR703A/D MCR703A Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient(1) Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Max 8.33 80 260 Unit C/W C/W C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1 K) IDRM, IRRM TC = 25C TC = 110C -- -- -- -- 10 200 A ON CHARACTERISTICS Peak Forward "On" Voltage (ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) Gate Trigger Current (Continuous dc)(2) (VAK = 12 Vdc, RL = 24 Ohms) TC = 25C TC = -40C Gate Trigger Voltage (Continuous dc)(2) TC = 25C (VAK = 12 Vdc, RL = 24 Ohms) TC = -40C Gate Non-Trigger Voltage(2) (VAK = 12 Vdc, RL = 100 Ohms, TC = 110C) Holding Current (VAK = 12 Vdc, Gate Open) (Initiating Current = 200 mA) Peak Reverse Gate Blocking Voltage (IGR = 10 A) Peak Reverse Gate Blocking Current (VGR = 10 V) Total Turn-On Time (Source Voltage = 12 V, RS = 6 k Ohms) (ITM = 8.2 A, IGT = 2 mA, Rated VDRM) (Rise Time = 20 ns, Pulse Width = 10 s) TC = 25C TC = -40C VRGM IRGM tgt VTM IGT -- -- VGT VGD IH -- -- 10 -- -- -- -- 12.5 -- 2.0 5.0 10 18 1.2 -- Volts A s -- -- 0.2 25 -- -- -- -- 75 300 0.8 1.0 -- Volts Volts mA -- -- 2.2 Volts A DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, RGK = 1 K, Exponential Waveform, TC = 110C) Repetitive Critical Rate of Rise of On-State Current (Cf = 60 Hz, IPK = 30 A, PW = 100 s, diG/dt = 1 A/s) (1) Case 369A when surface mounted on minimum pad sizes recommended. (2) RGK current not included in measurement. dv/dt -- 10 -- V/s di/dt -- -- 100 A/s http://onsemi.com 2 MCR703A Series Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - + Voltage IDRM at VDRM Forward Blocking Region (off state) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) P(AV), AVERAGE POWER DISSIPATION (WATTS) 110 5.0 30C 60C 90C 120C 180C 2.0 DC 30C 105 60C 90C 120C 180C DC 100 4.0 3.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 95 0 1.0 2.0 3.0 4.0 5.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. On-State Power Dissipation IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) Typical @ TJ = 25C Maximum @ TJ = 110C 10 r(t), TRANSIENT RESISTANCE (NORMALIZED) 100 1.0 ZqJC(t) = RqJC(t)*r(t) 0.1 Maximum @ TJ = 25C 1.0 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 0.01 0.1 1.0 10 100 1000 10,000 t, TIME (ms) Figure 3. On-State Characteristics Figure 4. Transient Thermal Response http://onsemi.com 3 MCR703A Series 35 VGT, GATE TRIGGER VOLTAGE (VOLTS) -20 20 40 60 80 100 110 I GT, GATE TRIGGER CURRENT ( m A) 1.0 30 25 0.5 20 15 -40 0 0 -40 -20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 2.0 2.0 IH , HOLDING CURRENT (mA) 1.5 IL , LATCHING CURRENT (mA) -20 0 20 40 60 80 100 110 1.5 1.0 1.0 0.5 0.5 0 -40 0 -40 -20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature http://onsemi.com 4 MCR703A Series MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.165 4.191 0.100 2.54 0.118 3.0 0.063 1.6 0.190 4.826 0.243 6.172 inches mm DPAK http://onsemi.com 5 MCR703A Series PACKAGE DIMENSIONS D-PAK CASE 369A-13 ISSUE Z -T- B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- GATE ANODE CATHODE ANODE MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 --- C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 MCR703A Series Notes http://onsemi.com 7 MCR703A Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. 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